Low-thermal-budget (300 degrees C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Si Joon Kim,Yong Chan Jung,Jaidah Mohan,Hyo Jeong Kim,Sung Min Rho,Min Seong Kim,Jeong Gyu Yoo,Hye Ryeon Park,Heber Hernandez-Arriaga,Jin-Hyun Kim,Hyung Tae Kim,Dong Hyun Choi,Joohye Jung,Su Min Hwang,Harrison Sejoon Kim,Hyun Jae Kim,Jiyoung Kim

APPLIED PHYSICS LETTERS（2021）

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Key words
ferroelectric tin/hf05zr05o2/tin,tin/hf05zr05o2/tin capacitors,low-thermal-budget,high-pressure
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