Temperature and time dependent electron trapping in Al₂O₃ thin films onto AlGaN/GaN heterostructures

APPLIED SURFACE SCIENCE（2022）

引用 3|浏览33

暂无评分

关键词

Al2O3,Gallium nitride,Plasma enhanced atomic layer deposition,Charge trapping,Capacitance transient measurements

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要

Temperature and time dependent electron trapping in Al2O3 thin films onto AlGaN/GaN heterostructures