Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy

V. A. Vorontsov,D. A. Antonov,A. V. Kruglov,I. N. Antonov,V. E. Kotomina,V. G. Shengurov,S. A. Denisov,V. Yu. Chalkov,D. O. Filatov,O. N. Gorshkov

Technical Physics Letters（2021）

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摘要

The effect of resistive switching in individual dislocations in memristor Ag/Ge/Si(001) structures is demonstrated experimentally using atomic force microscopy with a conducting probe. A hysteresis is found in the current–voltage characteristics of dislocations, which is typical of bipolar resistive switching related to the formation and destruction of an Ag filament in a Ge layer as a result of drift of Ag + ions along the dislocation core.

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关键词

resistive switching,memristor,Ge/Si heterostructure,dislocations,ion etching,atomic force microscopy.

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