Insight into Interface Electrical Properties of Metal–oxide–semiconductor Structures Fabricated on Mg-implanted GaN Activated by Ultra-High-pressure Annealing

Yuhei Wada,Hidetoshi Mizobata, Mikito Nozaki,Takuma Kobayashi,Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura,Heiji Watanabe

Applied physics letters（2022）

引用 0|浏览1
暂无评分
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要