Shining a Hot Light on Emerging Photoabsorber Materials: The Power of Rapid Radiative Heating in Developing Oxide Thin-Film Photoelectrodes

The unique possibilities of rapid thermal processing (RTP) for overcoming two significant challenges in the development of oxide thin-film photoelectrodes are demonstrated. The first is the need to exceed normal temperature limits for glass-based F:SnO2 substrates (FTO, similar to 550 degrees C) to achieve the desired density, crystallinity, and low defect concentrations in metal oxides. Flash-heating of Ta2O5, TiO2, and WO3 photoelectrodes to 850 degrees C is possible without damaging the FTO. RTP heating-rate dependencies suggest that the emission spectrum of the RTP lamp, which blue-shifts with increasing heating power, can significantly influence the crystallization behavior of wide-bandgap photoelectrodes (>= 1.8 eV). The second challenge is avoiding the formation of structural defects, trap states, grain boundaries, and phase impurities, which can be particularly difficult in multinary metal oxides. RTP treatment of alpha-SnWO4, a promising photoanode material, resulted in an increase in grain size and favorable crystallographic reorientation, culminating in a new performance record.