Preparation and electrical properties of ε‐Ti2N thin films

An e‐Ti2N film nearly free from any other phase of the Ti‐N compound was deposited and the temperature dependencies of the resistivity and the Hall coefficient of the film were measured. The resistivity data were analyzed in terms of the Bloch–Gruneisen equation. The characteristic temperature θ of the film was 410.8 K, independent of the temperature ranging from 4.2 to 300 K. From a Hall measurement it was determined that the conduction carriers in the e‐Ti2N were holelike over the temperature range from 77 to 300 K.