22 nm Embedded STT-MRAM Macro with 10 ns Switching and >1014 Endurance for Last Level Cache Applications
2021 Symposium on VLSI Technology(2021)
摘要
We demonstrate high performance 22 nm embedded STT-MRAM with a distinct combination of 10 ns write speed and >10
14
endurance at chip level. This is achieved by developing a unique MTJ free layer that exhibits high H
k
, low moment and low damping, which dramatically reduced switching current at short pulse widths. We further show that this MTJ design meets data retention requirement of 10 years at 105°C.
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关键词
STT-MRAM,SRAM,magnetic tunnel junction,nonvolatile,perpendicular magnetic tunnel junction
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