(Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires
Hans Mertens,Romain Ritzenthaler,Andriy Hikavyy,Min-Soo Kim,Zheng Tao,Kurt Wostyn,Tom Schram,Eddy Kunnen,Lars-Ake Ragnarsson,Harold Dekkers,Toby Hopf,Katia Devriendt,Diana Tsvetanova,Soon Aik Chew,Yoshiaki Kikuchi,Els Van Besien,Erik Rosseel,Geert Mannaert,An De Keersgieter,Adrian Chasin,S. Kubicek,A. Dangol,Steven Demuynck,Kathy Barla,Dan Mocuta,Naoto Horiguchi 231st ECS Meeting (May 28 - June 1, 2017)（2017）
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stacked transistors nanowires,gate-all-around
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