Room-temperature CW operation of GaSb laser diodes grown on on-axis (001) Si substrates (Conference Presentation)
Novel In-Plane Semiconductor Lasers XIX(2020)
摘要
The monolithic integration of III-V semiconductors on on-axis silicon is currently under active consideration. In this work we propose a novel epitaxial procedure to grow high quality, anti-phase boundary free GaSb layers on on-axis Si. Broad-area laser diodes based on AlGaAsSb/GaInAsSb QWs exhibit threshold current densities lower than 1 kA.cm-2 whereas narrow-ridge lasers operate cw above room temperature. Our results open the way to the epitaxial integration of a variety of IR lasers on on-axis Si.
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关键词
Semiconductor Lasers,Vertical-Cavity Surface-Emitting Lasers (VCSELs),Board-Level Optical Interconnects,Passively Mode-Locked Lasers
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