Optimization Design for 1.55 µm InAs/InGaAs quantum dot Square Microcavity Lasers on Silicon with Edge Midpoint Output Waveguide Structures
international conference on information photonics(2020)
摘要
We demonstrate an optimized structure design and analyze the optical mode characteristics of 1.55 µm Si-based III-V square microcavity laser with InAs/InGaAs quantum-dot active region and directional midpoint output waveguide. © 2020 The Author(s)
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关键词
directional midpoint output waveguide,optimization design,edge midpoint output waveguide,optimized structure design,optical mode characteristics,Si-based III-V square microcavity laser,size 1.55 mum,wavelength 1.55 mum,InAs-InGaAs-Si
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