QCSE and Carrier Blocking in P-modulation Doped InAs/InGaAs Quantum Dots

conference on lasers and electro optics(2021)

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摘要
The quantum confined Stark effect in I nAs/InGaAs Q Ds using a n undoped and p-modulation doped active region was investigated. Doping potentially offers more than a 3x increase in figure of merit modulator performance up to 100 °C.
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关键词
quantum confined Stark effect,p-modulation doped active region,figure of merit modulator performance,QCSE,carrier blocking,p-modulation doped quantum dots,InAs-InGaAs
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