7‐4: Late‐News‐Paper: Development of High‐mobility Top‐gate IGZTO‐TFT and Suppression of Threshold Voltage Shift in Short Channel Utilizing Laser Irradiation Process
SID Symposium Digest of Technical Papers（2020）
Abstract
Top‐gate self‐aligned thin‐film transistors (TFTs) with a high carrier mobility of 31 cm 2 /Vs were developed using the oxide semiconductor In‐Ga‐Zn‐Sn‐O. The threshold‐voltage shift in short‐channel top‐gate TFTs was suppressed by application of a laser irradiation process to reduce the resistance of the source/drain regions
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Key words
threshold voltage shift,laser
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