CRYSTAL STRUCTURE OF CASI2 FILMS FORMED UPON RADIATION-STIMULATED EPITAXIAL GROWTH OF CAF2 ON SI

Aleksey Kacyuba,Anatoly Dvurechenskii,Gennady Kamaev,Vladimir Volodin, Viktor Kirienko

International Forum “Microelectronics – 2020” Joung Scientists Scholarship “Microelectronics – 2020” XIII International conference «Silicon – 2020» XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis（2020）

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摘要

The crystal structure of films formed by molecular beam epitaxy (MBE) CaSi2 on Si (111) under electron irradiation was investigated [1]. It was found by the method of Raman scattering (RS) that with an increase in the thickness of the CaF2 film, a structural transition occurs in the CaSi2 film of the space group R3̅m from the 3-layer to 6-layer translational period of the crystal lattice (from 3R to 6R).

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