P‐108: Oxide Thin Film Transistors Integrated DC‐DC Converter with High Efficiency for Passive RFID Tag

In this work we present a DC‐DC converter based on metal oxide thin film transistors (TFTs) for passive radio frequency identification (RFID) tags. To increase the voltage conversion ratio, the cross‐coupled structure with positive feedback from adjacent stages is proposed. Compared with conventional DC‐DC converter with separation block, the proposed circuit features the decreased threshold voltage drop, the reduced on‐resistance of switch transistor, the improved driving capability and the increased power efficiency. The simulated results reveal that the output voltage and maximum power efficiency for proposed two‐stage DC‐DC converter are 16.6 V and 52% at a output current of 550 µA, which are 12.6 V and 42% at a output current of 250 µA for conventional designs.