P‐6: Development of Advanced Etch‐Stop Structures Oxide TFT

Fei Shang,Yong Xiang, Rui Wang,Xiaolin Wang,Zhonghao Huang, Zhuo Xu, Shaoru Li, Zhulin Liu,Haijun Qiu,Jianfeng Yuan,Taiye Min, Xiaofeng Ma,Yongliang Zhao

Digest of technical papers（2018）

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摘要

Advanced Etch‐Stop s tructure In‐Ga‐Zn‐Oxide thin film transistor (A‐ES TFT) using SD and IGZO layer self‐aligned process is lower production cost, less parasitic capacitance than etch‐stopped layer (ESL) Oxide TFTs. We also found excellent electrical properties and bias stability and fabricated a 12.5‐inch liquid crystal panel using A‐ES TFTs by only two photomask.

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