PEALD induced interface engineering of AlNO/AlGaN/GaN MIS diode with alternate insertion of AlN in Al<inf>2</inf>O<inf>3</inf>

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)（2017）

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PEALD induced interface engineering of AlNO/AlGaN/GaN MIS diode with alternate insertion of AlN in Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt;