Long‐channel In 0.7 Ga 0.3 As/In 0.52 Al 0.48 As quantum‐well MOSFETs on InP substrate with record μ n_eff = 6960 cm 2 /V‐sS.‐W. Son,S.H. Shin,J.H. Park, J.‐M. Baek, D.‐K. Kim,J.‐H. Lee,T.‐W. Kim, D.‐H. KimElectronics Letters（2017）引用 3|浏览1暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
