A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits
IEEE Transactions on Circuits and Systems II: Express Briefs(2022)
关键词
Latches,Logic gates,Libraries,Delays,Transistors,Standards,FinFETs,FinFET,low power design,leakage reduction,scan D flip-flop,transistor-level gate length biasing
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