第三代半导体辐射探测器研究进展
Science & Technology Review（2021）
Abstract
以氮化镓(GaN)、碳化硅(SiC)、金刚石等为代表的第三代半导体具有大的禁带宽度、高击穿电场、高饱和电子速率、高热导率以及具有高的位移阈能,耐高温、耐辐照能力,在核装置运行监测、空间探测、高能粒子物理探测等领域具有重要的应用潜力.介绍了第三代半导体的相关性质、辐射探测器主要制备方法以及不同类型辐射探测器的研究进展,展望了第三代半导体在辐射探测方面的发展趋势.提出第三代半导体辐射探测器的出现必然会促进核科学、空间探测、粒子及高能物理等方面的研究,对于国家提升核心竞争力具有重要的推动作用.
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