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Performance Improvement of Al0.3Ga0.7N/AlN/GaN HEMTs Using Nitrogen Pre-Treated Si3N4 Passivation

Gunjan Rastogi, M. Krishna Chaitanya, Sanjeev Khare, Ekta Yadav,R. K. Kaneriya,R. B. Upadhyay,Punam Pradeep Kumar,A. N. Bhattacharya

Microelectronic engineering（2021）

引用 3|浏览1
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关键词
GaN HEMT,N2 pre-treated Si3N4 passivation,Al0.3Ga0.7N/AlN/GaN heterostructure,DC & RF characteristics
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