Size- and Phase-Controlled Nanometer-Thick Β-Ga2o3 Films with Green Photoluminescence for Optoelectronic Applications

Realization and optimization of the tunable/enhanced optical properties are critical to further advancing the fields of optoelectronics, photonics, and nanoelectronics. In this context, here, we demonstrate green-emission characteristics with a similar to 30- fold enhancement in selectively engineered nanocrystalline Ga2O3 with control over the size, phase, and interface nanostructure. Pulsed-laser-deposited beta-phase Ga2O3 films with an average crystallite size of similar to 9 nm along with a highly dense, close-compact nanocolumnar structure with the lowest possible defect density facilitate the 30-fold enhancement in the photoluminescence (PL) intensity in the green region. Enhanced PL emission in the optimized, engineered nanoarchitecture sheds light on the design of Ga2O3 materials for promising future optoelectronic/photocatalytic applications.