Quality Improvement Mechanism of Sputtered AlN Films on Sapphire Substrates with High-Miscut-angles along Different Directions
CrystEngComm(2021)
摘要
We studied the annealing mechanism of the films with high-miscut-angles at low cost and high efficiency and revealed the essence of annealing to improve the film quality lies in the annihilation of grain boundaries during the recrystallization.
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