A 0.13 mu m 64Mb HfOx ReRAM Using Configurable Ramped Voltage Write and Low Read-Disturb Sensing Techniques for Reliability Improvement

This paper presents a 0.13 mu m 64Mb HfOx, ReRAM for embedded storage in IoT device. The configurable ramped voltage write and low read-disturb sensing techniques are proposed to address the reliability challenges in ReRAM. Experimental results show that, the ReRAM chip achieves more than 10(7) cycles' endurance and 10 years' retention at 75 degrees C. In addition, its full function and superior random write performance are demonstrated on a developed evaluation board.