Laser System For Measuring Mems Relief Created By The Method Of Deep Reactive Ion Etching

The method of laser interferometry is presented appropriate for precise determination of the depth of etching in a deep reactive ion etching system (DRIE), primarily used for the manufacturing of micro-electro-mechanical systems (MEMS). The system uses previous interferometer designs developed at the Institute of Institute of Scientific Instruments of the CAS, v. v. i. (ISI). We designed and manufactured a measurement system for specific MEMS and its functionality verified with the KLATencor D-120 profilometer.