The Photoluminescence Of Tio2 Thin Films Under Irradiation

The crystal structure and photoluminescence properties of TiO2 films, prepared by sol-gel method were investigated. Results of TiO2 films irradiation with Ti+ ions, energy of which is E=140 keV and dose 1,2x10(12) ions/cm(2) are considered. The photoluminescence spectra show several centers of emission. One of them is octahedron TiO6, that response on autolocalized exciton, and others indicate on the presence of defects surface states. There is a general quenching of the photoluminescence under irradiation, which associated with the distorted TiO6 octahedron, and formation of new donor and acceptor centers on the surface.