Novel Solutions To Enable Contact Resistivity < 1e-9 Omega-Cm(2) For 5nm Node And Beyond

Raymond Hung,Fareen Adeni Khaja,Kelly E. Hollar,K. V. Rao,Samuel Munnangi,Yongmei Chen,Motoya Okazaki,Yi-Chiau Huang,Xuebin Li,Hua Chung,Osbert Chan,Christopher Lazik,Miao Jin,Hongwen Zhou,Abhilash Mayur,Namsung Kim,Ellie Yieh

2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)（2018）

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NMOS contact chain,pre-amorphization implant,Ga cryo ion implant,implanted dopants,NSD epi,PSD epi,contact ion implantation,nanosecond laser anneal,MOS contact resistivity,doped epitaxial source-drain,doped Si:P selective epi,in-situ HD S-D epi films,transistor performance,advanced logic devices,size 5.0 nm,Si:P,Ga,Si0.55Ge0.45:B

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