Vertical Channel Capacitor-less One-Transistor DRAMs with a Pass-Way Trench for Improving Retention Time
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)（2016）
关键词
vertical channel capacitor-less one-transistor,1T-DRAM structure,pass-way trench,retention time,RT,device fabrication process,vertical channel,gate-all-around structure,PTVCT,memory operation,programming window,writing time
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