Ingap-Channel Field Transistors with High Breakdown Voltage

We have developed InGaP-channel field effect transistors (FETs) with high breakdown voltages that can be fabricated by using conventional GaAs FET fabrication processes. The buffer and barrier layers were also optimized for the realization of high-voltage operation. The InGaP-channel FET ha's an extremely high on-state drain-to-source breakdown voltage of over 40 V, and a gate-to-drain breakdown voltage of 55 V. This enabled high-voltage large-signal operation at 40 V. The third-order intermodulation distortion of the InGaP channel FETs was 10-20 dB lower than that of an equivalent GaAs-channel FET, due to the high operating voltage.