Characterization of EUV Image Fading Induced by Overlay Corrections Using Pattern Shift Response Metrology

Kit Ausschnitt,Vincent Truffert,Koen D'have,Philippe Leray

PHOTOMASK TECHNOLOGY 2018（2018）

Cited 3|Views3
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Key words
Optical CD metrology,asymmetric mark design,pattern shift response,variance control,pattern fidelity,EUV lithography,etch,chemical mechanical polish
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