Sims Investigation Of Ge(X)(4h-Sic)(1-X) Solid Solutions Synthesized By Ge-Ion Implantation Up To X=0.2

A detailed investigation of the Ge concentration in implanted samples has been carried out by SIMS and the effects affecting the depth distribution and measurement results have been determined. It is found that the MCs(+) SIMS technique is best suited to investigate Ge(x)(4H-SiC)(1-x) solid solutions Lip to x=0.2. while the O(2)(+) SIMS configuration is limited to x=0.1. The Ge concentrations obtained by SIMS are very close to the nominal values. Oil the opposite, performing a comparison with previous RBS data, we find that the RBS values are systematically underestimated by similar to 30%. Finally, at very high dose, we find that some of the implanted species are lost by recoil and sputtering effects.