Low switching loss diode of 600V RC-IGBT with new contact structure

In this paper, low switching loss diode of 600V RC-IGBT is proposed without largely changing wafer process or deteriorating IGBT characteristics by device simulation and real RC-IGBT. New RC-IGBT has the same contact in the IGBT region as the conventional one and the different contact at the side of mesa region in the diode region which is fabricated by changing etching gas for the contact structure. New RC-IGBT has not only low reverse recovery loss but also excellent robustness in severe conditions of high V-CC and high temperature.