Defect-induced B 4 C electrodes for high energy density supercapacitor devices

Boron carbide powders were synthesized by mechanically activated annealing process using anhydrous boron oxide (B 2 O 3 ) and varying carbon (C) sources such as graphite and activated carbon: The precursors were mechanically activated for different times in a high energy ball mill and reacted in an induction furnace. According to the Raman analyses of the carbon sources, the I(D)/I(G) ratio increased from ~ 0.25 to ~ 0.99, as the carbon material changed from graphite to active carbon, indicating the highly defected and disordered structure of active carbon. Complementary advanced EPR analysis of defect centers in B 4 C revealed that the intrinsic defects play a major role in the electrochemical performance of the supercapacitor device once they have an electrode component made of bare B 4 C. Depending on the starting material and synthesis conditions the conductivity, energy, and power density, as well as capacity, can be controlled hence high-performance supercapacitor devices can be produced.