Resistance Switching and Conduction Mechanism on Ferroelectric Copolymer Thin Film Device

The memristor of sandwich structure is prepared by employing the ferroelectric copolymer poly (vinylidene fluoride/trifluoroethylene) (P(VDF-TrFE)). The device exhibits great bipolar resistance switching characteristics. The low on-off voltage (3/-2.7 V) and high I-on/I-off ratio (approximate to 10(3)) as well as fast switching speed are obtained in this device. Based on the intrinsic spontaneous polarization characteristics of ferroelectric materials, the conduction mechanism model of ferroelectric film conductive channel is established and the linear relationship between conductivity and average polarization intensity is given. The calculated results of conductance-voltage (G-V) curve show an obvious hysteresis phenomenon and the distinguishable high/low conductivity states. This physical model is consistent with the experimental results, indicating a reasonable conduction mechanism of the device.