50x Endurance Improvement in TaOx RRAM by Extrinsic Doping

Resistive RAMs (RRAM) have shown immense promise in serving as the building blocks of in-memory computing systems for neuromorphic applications. However, high forming voltage, low endurance and poor retention below the 20nm technology node hinder its use. In this paper, we present a CMOS-compatible technique, which not only improves the endurance and retention but also lowers down the forming volt...