Research of etching process of Al0.8Sc0.2N based on ICP etching equipment

Etching process is the basis of fabrication of AlScN piezoelectric devices. The mechanism of etching Al0.8Sc0.2N film by inductively coupled plasma etching machine was studied. When the gas flow rates of BCl3/Ar at 80/5 seem, and the tray temperature was 293 K, the etching selectivity ratio of Al0.8Sc0.2N to photoresist was 0.7: 1, and the etching rate was 79 nm/min, the etching inclination angle ...