GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX

K. Nomoto,R. Chaudhuri,S. J. Bader,L. Li,A. Hickman,S. Huang,H. Lee,T. Maeda,H. W. Then,M. Radosavljevic,P. Fischer,A. Molnar,J. C. M. Hwang,H. G. Xing,D. Jena

2020 IEEE International Electron Devices Meeting (IEDM)（2020）

引用 18|浏览14

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关键词

p-channel transistor on-currents,polarization discontinuity,high-voltage wide-bandgap CMOS device platform,power electronics,p-type transistor counterpart,n-channel GaN HEMTs,RF circuits,p-channel nitride transistors,GHz speed barrier,high-density polarization-induced 2D hole gas,best-in-class contact resistances,scaled T-gate design,frequency 20.0 GHz,GaN

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