A 2.8 μm Pixel for Time of Flight CMOS Image Sensor with 20 ke-Full-Well Capacity in a Tap and 36 % Quantum Efficiency at 940 nm Wavelength
international electron devices meeting（2020）
关键词
quantum efficiency,silicon process,high-resolution time of flight CMOS image sensor,high-resolution ToF CMOS image sensor,4-tap global shutter pixel,full-well capacity,FCW,backside scattering technology,BST,photodiode doping process,demodulation contrast,static potential gradient,MOS capacitor,wavelength 940.0 nm,Si
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