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Cu Metallisation On Glass Substrate With Through Glass Via Using Wet Plating Process

M. Takayama, K. Inoue,H. Honma, M. Watanabe

TRANSACTIONS OF THE INSTITUTE OF METAL FINISHING(2021)

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摘要
The IoT (Internet of Things) society will be arriving in the near future, and many things will be connected by the Internet. Consequently, data traffic will be increased, and so will the demand to improve the performance of communication devices. Currently, plastics and ceramics are commonly used as insulating materials for communication components, but they are getting close to the limit in terms of material properties, because the next generation high-performance communication devices require signal frequency of 20 GHz and beyond. Therefore, further improvements in the properties of the insulating materials as well as in the performance of electronic devices are being demanded. A glass substrate with copper film provides more advantages for electronics devices than other materials. The most obvious advantage is given by the material properties, surface smoothness, dimensional stability in high temperature, low conductivity, low dielectric loss and for its scalability to larger area panels with low cost. In the present study, the authors report on an adhesion strength of 0.4 kN m(-1) between glass and copper seed layer. Moreover, a wet plating process has been successfully demonstrated which enables easy and uniform film formation on a glass wafer and inside through holes.
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关键词
Glass, Through Glass Via (TGV), metallisation, electroless copper plating
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