Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

NANOMATERIALS(2021)

引用 9|浏览23
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关键词
HfO2/Si0.7Ge0.3 gate stack,ozone oxidation,Si-cap,interface state density,passivation
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