Intrinsic Amorphous Silicon Bilayers for Effective Surface Passivation in Silicon Heterojunction Solar Cells: A Comparative Study of Interfacial Layers
Physica status solidi A, Applications and materials science(2021)
摘要
The impact of intrinsic amorphous silicon bilayers in amorphous silicon/crystalline silicon (a‐Si:H/c‐Si) heterojunction solar cells is investigated. Intrinsic a‐Si:H films with a wide range of film densities and hydrogen contents are prepared via a plasma‐enhanced chemical vapor deposition (PECVD) technique by modifying various process parameters. For silicon heterojunction (SHJ) solar cells with a‐Si:H films applied as single i‐layers, the resulting surface passivation at the a‐Si:H/c‐Si interface is poor. However, surface passivation is significantly improved by applying intrinsic bilayers, which are composed of a porous interfacial layer (≈2 nm) and an overlying dense layer (≈8 nm). The microstructure factor R* of the interfacial a‐Si:H layer, which is related to the SiH bond microstructure and determined by infrared absorption spectroscopy, closely correlates to the surface passivation capability of the bilayers. A variety of PECVD process parameters (temperature, pressure, or precursor gas species) can be utilized to grow an interfacial layer for good surface passivation, provided that its R* is controlled within a suitable range. This indicates that R* is a key universal parameter for optimizing i‐bilayers and realizing high‐efficiency SHJ solar cells.
更多查看译文
关键词
amorphous silicon,Fourier transform infrared spectroscopy,heterojunctions,hydrogen,plasma chemical vapor deposition,silicon solar cells,surface passivation
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要