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270-To-300ghz Double-Balanced Parametric Upconverter Using Asymmetric Mos Varactors And A Power-Splitting-Transformer Hybrid In 65nm Cmos

2021 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)(2021)

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摘要
Wireless communication at $\\sim 300$ GHz is drawing attention due to its potential to support a high data-rate using the wide available bandwidth. Transmitters operating at $\\sim 300$ GHz have been reported in [1] –[5]. In order to support the high-order modulation, high datarate, and an increased range, the transmitter must have a high output 1dB compression point (OP $_{1dB})$ and a wide bandwidth. Unfortunately, instead of OP 1dB , only the saturated output power levels, ${P}_{sat}$, of the CMOS transmitters $[3- 5] _{}$ are reported. A 272GHz CMOS amplifier has been reported in [6], but it only achieves an OP 1dB of -10.18dBm and a 3dB bandwidth of less than 5GHz. Broadband power amplification at 300GHz in CMOS is not practical since the transistor f max is $\\sim 350$ GHz or less. Due to this, the CMOStransmitter linear output power is limited by the upconversion mixer OP 1dB . Unfortunately, the mixers operating near 300GHz suffer from low conversion gain (CG) and OP 1dB .
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关键词
asymmetric mos varactors,double-balanced,power-splitting-transformer
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