Effects Of Bias Voltage On Mechanical Properties And Corrosion Resistance Of Tin Nanostructure Films Prepared By Ion Source Assisted Hipims

To improve the density and reduce the structural defects of the films prepared by magnetron sputtering, TiN nanostructure films were deposited on 304 stainless steel and P-type (100) crystal silicon wafers by ion source assisted HiPMIS technology with different ion source and substrate bias voltage to investigate the effect of film microstructure on the hardness, toughness and corrosion resistance. The morphology and crystal structure of the films were analyzed by SEM and GIXRD. Hardness and toughness of the film were measured with nanoindentation measurement and Vickers. The corrosion resistance was measured by electrochemical workstation. The results show that the bombardment effect increases with the increase of the substrate bias voltage and the utilization of ion source, which leads to a decrease in the deposition rates of the films and an increase in film density. When the substrate bias voltage is -200 V, the hardness reaches a maximum of 16.2 GPa, the corresponding grain size is the smallest, and the corresponding (111) crystal surface peak has the highest strength. The hardness of the film decreases slightly with the utilization of ion source. Additionally, the toughness and corrosion resistance of the films are also improved with the increase of the substrate bias voltage