Influence of Sb self-doping on thermoelectric performance of Cu12Sb4S13
Materials Letters（2021）
Abstract
•The substitution of Sb for Cu effectively reduce the carrier concentration.•The κe and κL both declines significantly with the increase of Sb doping amount.•A maximum zT of 0.8 at 700 K is achieved in Cu11.8Sb4.2S13.
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Key words
Cu12Sb4S13,Sb self-doping,Thermoelectric performance,Microstructure,Semiconductors
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