FORMATION OF DEFECTS IN SILICON IRRADIATED WITH PARTICLES OF APPROXIMATELY 100 AUM MASS AND WITH ENERGIES UP TO 100 MEV .2. CHANGES IN THE RECOMBINATION PROPERTIES

IA BARANOV,PV KUCHINSKII,VM LOMAKO,AP PETRUNIN, SO TSEPELEVICH,LN SHAKHLEVICH

SOVIET PHYSICS SEMICONDUCTORS-USSR（1991）

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