An Investigation Of Frequency Dependent Reliability And Failure Mechanism Of Pgan Gated Gan Hemts

Roshan L. Kini, Shankar Dhakal,Sadab Mahmud,Andrew J. Sellers,Michael R. Hontz,Cheikh A. Tine,Raghav Khanna

IEEE ACCESS（2020）

引用 5|浏览9

暂无评分

关键词

Logic gates,Gallium nitride,Performance evaluation,Degradation,Reliability,HEMTs,MODFETs,Frequency dependent,gate-stress,GaN,reliability,voltage overshoot

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要