Lasers based on self-assembled InAs/GaAs and InP/InGaP quantum dots

Room-temperature lasing is demonstrated for self-assembled InP/InGaP quantum dots. A 2 mm long laser diode exhibits a threshold current density of 2.3 kA/cm(2) in pulsed operation. Stimulated emission occurs via the ground state at lambda = 728 nm. A maximum light output power of 250 mW is obtained without any saturation effects. 1.3 mum light emission is achieved with self-assembled InAs/GaAs quantum dots on GaAs (001) substrates using an extremely low deposition rate of only 0.01 monolayers/s at a growth temperature of 500 degreesC. The photoluminescence peak widths are as narrow as 23 meV. Lasing occors on the third excited state of an Al-free device. Internal quantum efficiencies and internal losses are determined at room temperature.