Novel Oxidants and Sources of Nitrogen for Atomic Layer Deposition

Significant effort has gone into developing novel metal precursors for Atomic Layer Deposition. This effort has been primarily driven by the industry need for new high K materials and low temperature deposition for metal nitride films. The need for novel oxidants and sources of nitrogen has been largely ignored. This paper focuses on delivery of anhydrous hydrogen peroxide and anhydrous hydrazine for ALD applications.