A Novel Technique to Investigate the Role of Traps in the Off‐State Performance of AlGaN/GaN High Electron Mobility Transistor on Si Using Substrate Bias

Nayana Remesh,Sandeep Kumar,Ivor Guiney,Colin J. Humphreys,Srinivasan Raghavan,Rangarajan Muralidharan,Digbijoy N. Nath

physica status solidi (a)（2019）

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AlGaN,high electron mobility transistors,substrate sweeping,thermionic

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