Singularities of the Thin AlN Layers Formation by Molecular Beam Epitaxy on 3C-Sic/si(111) Templates with On-Axis and 4° Off-Axis Disorientation
Mechanics of solids(2020)
摘要
Abstract—In this article, we studied the growth characteristics of AlN epitaxial layers on 3С-SiC/Si(111) templates at various values of atomic flux of aluminum at a constant growth temperature and a constant flow of atomic nitrogen. The AFM method was used to study the morphology of the resulting structures. The minimum roughness was achieved at a growth rate of 150 nm/h on on-axis templates, and at 90 nm/h on off-axis templates. Epitaxial layers of hexagonal AlN with root mean square roughness of less than 3 nm were obtained on 3С-SiC/Si(111) templates with a diameter of 100 mm, in which there was no grain structure. Single-crystal AlN (0002) layers with FWHM (ω‑geometry) values of about 1.4° were obtained.
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关键词
molecular beam epitaxy,MBE,gallium nitride,GaN,aluminum nitride,AlN,silicon carbide,3C-SiC
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