The effects of Mg impurities on beta-Ga2O3 thin films grown by MOCVD

In this study, we investigated the impurity effect of Ga2O3 doped thin film by simple doping method using Mg acetate solution. Both undoped Ga2O3 thin films and Mg-doped Ga2O3 thin films were grown on Si substrates at 600 and 900 degrees C for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at 900 degrees C was rougher than those grown at 600 degrees C and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the 600 degrees C growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of 900 degrees C increased.